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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BU323AP/D NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. * Collector-Emitter Sustaining Voltage -- VCER(sus) = 475 Vdc * 125 Watts Capability at 50 Volts * VCE Sat Specified at - 40_C = 2.0 V Max. at IC = 6.0 A * Photoglass Passivation for Reliability and Stability BASE COLLECTOR BU323AP DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS 1k 30 EMITTER CASE 340D-02 TO-218 TYPE II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol Value 400 475 6.0 10 16 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage VCEO(sus) VCEV VEB IC ICM IB IBM PD Collector Current -- Continuous -- Peak (1) Base Current -- Continuous -- Peak (1) 3.0 Total Power Dissipation -- TC = 25_C -- TC = 100_C Derate above 25_C 125 100 1.0 Watts Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to + 200 _C THERMAL CHARACTERISTICS Characteristic Symbol RJC TL Max 1.0 Unit Thermal Resistance, Junction to Case _C/W _C Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds 275 (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle x 10%. REV 8 (c) Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data 3-1 II III I I I I IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIII IIIIII I I I IIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIII I I I IIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII BU323AP 1Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. FUNCTIONAL TESTS SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS1 OFF CHARACTERISTICS1 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) 0V 3-2 * Adjust t1 such that * IC reaches Required * value. Pulsed Energy Test (See Figure 12) Second Breakdown Collector Current with Base-Forward Biased Fall Time Storage Time Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) Diode Forward Voltage (IF = 10 Adc) Base-Emitter On Voltage (IC = 10 Adc, VCE = 6 Vdc) Base-Emitter Saturation Voltage (IC = 6 Adc, IB = 120 mAdc) (IC = 10 Adc, IB = 300 mAdc) (IC = 6 Adc, IB = 120 mAdc, TC = - 40_C) Collector-Emitter Saturation Voltage (IC = 3 Adc, IB = 60 mAdc) (IC = 6 Adc, IB = 120 mAdc) (IC = 10 Adc, IB = 300 mAdc (IC = 6 Adc, IB = 120 mAdc, TC = - 40_C) DC Current Gain (IC = 3 Adc, VCE = 6 Vdc) (IC = 6 Adc, VCE = 6 Vdc) (IC = 10 Adc, VCE = 6 Vdc) Emitter Cutoff Current (VEB = 6 Vdc, IC = 0) Collector Cutoff Current (Rated VCBO, IE = 0) Collector Cutoff Current (Rated VCER, RBE = 100 Ohms) Collector-Emitter Sustaining Voltage (Figure 1) (IC = 3 A, RBE = 100 Ohms, L = 500 H) Unclamped Collector-Emitter Sustaining Voltage (Figure 1) L = 10 mH (IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO) 20 ms Figure 1. Sustaining Voltage Test Circuit t1 * 470 VCC = 16 Vdc 47 BC337 1N4001 VCEO Characteristic L 100 VCER ( (VCC = 12 Vdc, IC = 6 Adc, , , IB1 = IB2 = 0.3 Adc) Fig. 2 B 1K TUT 30 * CLAMPED E C UNCLAMPED Vclamp VCEO(sus) VCER(sus) VCE(sat) VBE(sat) VBE(on) Symbol IC2L / 2 Motorola Bipolar Power Transistor Device Data Figure 2. Switching Times Test Circuit ICBO IEBO ICER IS/B Cob hFE Vf ts tf ftest = 200 Hz PULSE WIDTH = 1 ms 51 1N4001 IB = 0.3 Adc Min 550 300 150 50 475 400 40 15 Vdc 0 Vdc 100 See Figure 10 Typ 165 550 350 150 5.2 7.5 2 B 1K 2000 Max 30 350 3.5 2.5 2.2 3 2.4 1.5 1.7 2.7 2.0 15 15 40 VCC = 12 Vdc 1 1 TUT 2 /20 W IC = 6 Adc E C mAdc mAdc mAdc Unit Vdc Vdc Vdc Vdc Vdc Vdc mJ pF s s BU323AP 2000 1000 hFE, DC CURRENT GAIN 700 500 300 200 100 70 50 30 20 0.1 TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3 TJ = 25C 2.5 25C 2 10 A 1.5 IC = 0.5 A 3 6 VCE = 3 Vdc VCE = 6 Vdc 0.2 2 3 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMP) 5 7 10 1 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 IB, BASE CURRENT (AMP) 0.5 1 2 Figure 3. DC Current Gain VCE(sat) , COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(sat) , COLLECTOR-EMITTER SATURATION VOLTAGE (V) Figure 4. Collector Saturation Region 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.1 TJ = - 40C IC/IB = 50 TJ = 25C 2.2 2.1 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 TJ = 25C TJ = - 40C 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Collector-Emitter Saturation Voltage Figure 6. Base-Emitter Voltage IC, COLLECTOR CURRENT ( A) 10 7 5 3 t, TIME ( s) 2 1 0.7 0.5 0.3 0.2 0.1 0.2 104 ts 103 102 101 75C VCE = 250 Vdc TJ = 150C IC = ICES tf TJ = 25C IC/IB = 20 VCE = 12 Vdc 100 25C 0.3 0.5 0.7 1 2 3 57 IC, COLLECTOR CURRENT (AMP) 10 20 FORWARD 10 -1 REVERSE - 0.2 0 + 0.2 + 0.4 + 0.6 VBE, BASE-EMITTER VOLTAGE (VOLTS) + 0.8 Figure 7. Turn-Off Switching Time Figure 8. Collector Cutoff Region Motorola Bipolar Power Transistor Device Data 3-3 BU323AP r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 20 50 100 200 500 1000 2000 0.05 RJC(t) = r(t) RJC RJC = C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk) D = 0.5 0.2 0.02 t2 DUTY CYCLE, D = t1/t2 t1 Figure 9. Thermal Response 50 IC, COLLECTOR CURRENT (AMP) 20 10 5 2 1 0.2 0.1 TC = 25C BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 5 10 20 30 200 300 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 5.0 ms 1.0 ms 100 s dc 0.01 0.005 Figure 10. Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TC = 25_C, TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 11. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 POWER DERATING FACTOR (%) VCC = 16 Vdc INDUCTIVE LOAD <1 11 mH VZ 80 SECOND BREAKDOWN DERATING THERMAL DERATING t1 0 Vdc 47 50 ms 1N4001 470 BC337 60 C B TUT 1K 100 30 0.22 F 2.2 40 VZ = 350 V (BU323P) VZ = 400 V (BU323AP) at IZ = 20 mA 1N4001 20 E 0 0 40 80 120 TC, CASE TEMPERATURE (C) 160 200 t1 to be selected such that IC reaches 10 Adc before switch-off. NOTE: Figure 12 specifies energy handling capabilities in an automotive ignition circuit. Figure 11. Power Derating Figure 12. Ignition Test Circuit 3-4 Motorola Bipolar Power Transistor Device Data BU323AP PACKAGE DIMENSIONS C B Q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX --- 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --- 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX --- 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --- 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 U S K L 1 2 4 A 3 D V G J H DIM A B C D E G H J K L Q S U V STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 340D-02 TO-218 TYPE ISSUE B Motorola Bipolar Power Transistor Device Data 3-5 BU323AP Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 3-6 Motorola Bipolar Power Transistor Device Data BU323AP/D *BU323AP/D* |
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